10th Akasaki Research Center Symposium
"To
the New Horizon of the Nitride Research"
November 26, 2010
Hotel Rubura Ohzan
(Hotel Rubura ohzan official site here)
Symposium
Program
(Japanese Announcement here)
[1] Growth and Characterization-1
10:20-11:00 "A
quarter-century of quantum dots: From science to practical implementation,"
Y. Arakawa (University of Tokyo)
11:00-11:40 "Growth of indium nitride and its heterostructures
by MOVPE: challenges and drawbacks,"
B. Gil (University of Montpellier)
11:40-12:00 "Growth temperature and room temperature characterization of nitride semiconductors
by MOVPE reactor installed in the X-ray CTR measurements system,"
Y. Takeda, K. Ninoi, G.X. Ju, S. Fuchi, and M. Tabuchi (Naagoya University)
[2] Growth and Devices
13:20-14:00 "Inter-surface
diffusion and its application to morphology control,"
T. Nishinaga (Toyohashi University of Technology)
14:00-14:20 "Development
of nitride-based solar cells,"
M. Iwaya, Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Takeuchi, S. Kamiyama,
I. Akasaki (Meijo University), and H. Amano (Nagoya University)
14:20-14:40 "Normally-off Mode AlGaN/GaN HEMTs with p-InGaN cap layer,"
T. Mizutani, X. Li (Nagoya University) and F. Nakamura (POWDEC K.K.)
[3] Growth and Characterization-2
15:00-15:40 "Preparation
and properties of freestanding GaN crystal by HVPE,"
A. Usui, H. Sunakawa, N. Sumi, K. Yamamoto, H. Geng (Furukawa Co. Ltd.),
A. Yamaguchi (Kanazawa Institute of Technology)
15:40-16:00 "Recent development of nitride-based micro- and nano-rod structure