研究業績

論文

  • [1] Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano: "Facet dependence of leakage current and carrier concentration in m-lane GaN Schottky barrier diode fabricated with MOVPE", physica status solidi a, vol.214, Issue 8, 1600829, (2017/7)
  • [2] Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano: "m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates", physica status solidi a, vol215, Issue 9, 1700645, (2017/10 (2018/5))
  • [3] Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano: "Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants", Phys. Status Solidi B, Vol.254, Issue 8, 1600722, (2017/04)
  • [4] Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-jun Lee, Yu-Huai Liu, Markus Pristovsek, Yoshio Honda, and Hiroshi Amano: "Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metal-organic vapor phase epitaxy", Journal of Crystal Growth, Vol.482, 1-8, (2018/01)
  • [5] Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano: "Decomposition of trimethylgalliumand adduct formation in ametalorganic vapor phase epitaxyreactor analyzed by high-resolution gasmonitoring system", Phys. Status Solidi B, Vol.254, Issue 8, 1600737, (2017/06)
  • [6] Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano: "Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching", Phys. Status Solidi B, Vol.254 , 1700387, (2017/11)
  • [7] Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-JunLee, Yuhuai Liu, Markus Pristovsek, Yoshio Honda, Hiroshi Amano: "Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy", Journal of Crystal Growth, Vol.482, pp.1-8, (2018/01)
  • [8] Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano: "DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy", Applied Physics Letters, Vol.111, pp.141602/1-5, (2017/10)
  • [9] Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano: "Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes", Applied Physics Letters, Vol.111, pp.122102/1-5, (2017/09)
  • [10] H.Kawai, S.Yagi, S.Hirata, F.Nakamura, T.Saito, Y.Kamiyama, M.Yamamoto, H.Amano, V.Unni, and E.M.S.Narayanan: "Low cost high voltage GaN polarization superjunction field effect transistors", physica status solidi a, Vol.214 No.8, pp.1600834/1-10, (2017/08)
  • [11] Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, and Hiroshi Amano: "Effect of dislocations on the growth of p-type GaN and on the characteristics of p–n diodes", physica status solidi a, Vol.214 No.8, pp.11600837/1-5, (2017/08)
  • [12] Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda and Hiroshi Amano: "Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations", Applied Physics Express, Vol.10, pp.082101/1-4, (2017/06)
  • [13] Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano: "Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity", Applied Physics Letters, Vol.110, pp.262105/1-5, (2017/06)
  • [14] S.-Y.Bae, K.Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Lee, M.Kushimoto, Y.Honda, H.Amano: "Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer", Journal of Crystal Growth, Vol.468, pp.110-113, (2017/06)
  • [15] Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, Hiroshi Amano: "Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer", Journal of Crystal Growth, Vol.468, pp.547-551, (2017/06)
  • [16] Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano: "Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers", Journal of Crystal Growth, Vol.468, pp.552-556, (2017/06)
  • [17] H.Iwata, H.Kobayashi, T.Kamiya, R.Kamei, H.Saka, N.Sawaki, M.Irie, Y.Honda, H.Amano: "Annealing effect on threading dislocations in a GaN grown on Si substrate", Journal of Crystal Growth, Vol.468, pp.835-838, (2017/06)
  • [18] Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano: "A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer", Journal of Crystal Growth, Vol.468, pp.866-869, (2017/06)
  • [19] Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki: "Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output", Japanese Journal of Applied Physics, Vol.56, pp.061002/1-9, (2017/06)

国内学会・口頭発表

  • [1] 天野 浩, "Transformative Electronicsが拓く未来社会", 電子情報通信学会創立100周年記念事業 東海支部講演会, 名古屋大学, 愛知, (2017/9/26)
  • [2] 天野 浩, "トランスフォーマティブエレクトロニクスが支える新しいモビリティシステム", IEEE Metro Area Workshop in Nagoya (MAW2017), 中京大学, 愛知, (2017/10/8)
  • [3] 天野 浩, "Transformative Electronicsが築く未来社会, 先進パワー半導体分科会", 名古屋国際会議場, 愛知, (2017/11/2)
  • [4] 出来 真斗, 曾根 和詩, 永松 謙太郎, 田中 敦之, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩, "GaN表面への酸化プロセスがALD-Al2O3/GaN界面の電気特性に与える影響", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18p-C302-3, (2018/03/18)
  • [5] 上岡 義弘, 出来 真斗, 本田 善央, 天野 浩, "Ga2O3保護膜による縦型GaNダイオードの耐圧向上", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-7, (2018/03/18)
  • [6] 佐藤 真一郎, 出来 真斗, 中村 徹, 大島 武, "窒化ガリウム半導体に高温イオン注入したプラセオジム(Pr)の発光観測", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-7, (2018/03/18)
  • [7] 佐藤 真一郎, 岡田 浩, 出来 真斗, 中村 徹, 若原 昭浩, 大島 武, "窒化ガリウム中の単一希土類元素からの発光観測を目指したイオン注入法および熱処理条件の検討", 第78回応用物理学会秋季学術講演会, 福岡国際会議場, 福岡, 8a-A414-1, (2017/09/08)
  • [8] 田中 敦之, 宇佐美 茂佳, 安藤 悠人, 永松 謙太郎, 新田 州吾, 本田 善央, 天野 浩, "多光子PLを用いたGaN・GaNエピ層中の転位観察", 第46回結晶成長国内会議, ホテルコンコルド浜松, 静岡, 27a-C05, (2017/11/27)
  • [9] 田中 敦之, 宇佐美 茂佳, 安藤 悠人, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩, "GaN中転位の三次元観察と転位がパワーデバイスに与える影響", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 19p-E202-6, (2018/3/19)
  • [10] 本田 善央, 宇佐美 茂佳, 加藤 雅人, 佐藤 大樹, 西谷 智博, 天野 浩, "レーザー散乱を用いた InGaN成長のその場観察", 第13回励起ナノプロセス研究会, 淡路夢舞台国際会議場, 兵庫県, (2018/1/20)
  • [11] 本田 善央, 宇佐美 茂佳, 天野 浩, "光電流測定によるLED内部量子効率評価, 学振162委員会第107回研究会", 上智大学, 東京, (2018/3/5)
  • [12] 宇佐 美茂佳, 福島 颯太, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩, "転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析", 第78回応用物理学会 秋季学術講演会, 福岡国際会議場, 福岡, 6a-C17-6, (2017/9/5-8)
  • [13] Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Yoshio Honda, Hiroshi Amano, "The effect of the environment temperature of the wafer on InGaN grown by metalorganic vapor phase epitaxy", 第78回応用物理学会 秋季学術講演会, 福岡国際会議場, 福岡, 8a-A301-8, (2017/9/5-8)
  • [14] 安藤 悠人, 永松 謙太郎, 田中 敦之, 宇佐美 茂佳, バリー ウスマン1, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩, "オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD", 第78回応用物理学会 秋季学術講演会, 福岡国際会議場, 福岡, 5p-C17-6, (2017/9/5-8)
  • [15] 小倉 昌也, 安藤 悠人, 宇佐 美茂佳, 田中 敦之, 出来真斗, 本田善央, 八木 修一, 河合 弘治, 天野 浩, "ソース電極をショットキー接合としたノーマリーオフ型PSJの設計", 第78回応用物理学会 秋季学術講演会, 福岡国際会議場, 福岡, 7p-S22-11, (2017/9/5-8)
  • [16] 河野 司, 久志本 真希, 永松 謙太郎, 新田 州吾, 本田 善央, 天野 浩, "-c面GaN基板上のGaNのMOVPE成長における酸素低減の研究", 電子情報通信学会 電子デバイス研究会, 名古屋工業大学, 愛知, ED2017-53, (2017/11/30)
  • [17] Qiang LIU, Naoki Fujimoto, Shugo Nitta, Yashio Honda, Hiroshi Amano, "Study of showerhead nozzle configuration in vertical HVPE reactor for large size bulk GaN crystal growth", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-E202-4, (43177)
  • [18] 叶 正, 新田 州吾, 永松 謙太郎, 本田 善央, 天野 浩, "高分解能質量分析によるⅢ族窒化物半導体気相成長のためのアンモニア分解及び反応の解析", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 17p-E202-15, (2018/03/17-20)
  • [19] 安藤 悠人, 永松 謙太郎, 田中 敦之, 宇佐美 茂佳, バリー ウスマン1, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩, "m面GaN基板上SBDにおける障壁高さの金属仕事関数依存性", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-2, (2018/03/17-20)
  • [20] 宇佐美 茂佳, 福島 颯太, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩, "GaN自立基板上pnダイオード逆方向リーク電流の成長条件依存性", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-4, (2018/03/17-20)
  • [21] 宇佐美 茂佳, 菅原 義弘, 姚 永昭, 石川 由加里, 間山 憲仁, 戸田 一也, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩, "3DAPおよびLACBED法によるGaN自立基板上pnダイオードのリークの起源調査", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-C302-5, (2018/03/17-20)
  • [22] 田中 大睴, 永松 謙太郎, 山田 永, 山田 寿一, 熊谷 義直, 新田 州吾, 本田 善央, 清水 三聡, 天野 浩, "HVPE法によるAIGaNの薄膜成長", 第65回応用物理学会春季学術講演会, 早稲田大学, 東京, 18a-E202-8, (2018/03/17-20)

国際学会・口頭発表

  • [1] H.Amano, "Lighting the Earth with LEDs", 9th International Conference on Materials for Advanced Technologies (ICMAT2017), Singapore, Nobel Laureate Public Lecture, (2017/6/19)
  • [2] H.Amano, "Nitride-Based Future Electronics for Establishing a Sustainable Society", 9th International Conference on Materials for Advanced Technologies (ICMAT2017), Singapore, Plenary Lecture, (2017/6/20)
  • [3] Hiroshi Amano, Tatsuya Hattori, Yoann Robin, Kaddour Lekhal, Si-Young Bae, Maki Kushimoto, Yoshio Honda, Yasuhisa Ushida, Geoffrey Avit, Agnès Trassoudaine", Growth of III-Nitride Nanorods for Future Optoelectronics Applications", 18th International Conference on Light-Matter Coupling in Nanostructures (PLMCN18), Wurzburg, Germany, Plenary Lecture, (2017/7/11)
  • [4] H.Amano, "New era of LEDs", The 24th Congress of the International Comission for Optics (ICO-24), Tokyo, Japan, Plenary Lecture, (2017/8/21)
  • [5] H.Amano, Y.Robin, S.Y.Bae, K.Nagamatsu, M.Kushimoto, M.Deki, T.Nishitani, D.Sato, A.Tanaka, S.Nitta, Y.Honda, M.Pristovsek", Development of Sustainable Smart Society via Transformative Electronics", The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, Nobel Laureate Lecture, (2017/8/28)
  • [6] S.Usami, Z.Ye, X.Yang, K.Nagamatsu, M.Kushimoto, M.Deki, A.Tanaka, S.Nitta, Y.Honda, M.Pristovsek, H.Amano", Blue LEDs and Transformative Electronics for Establishing Sustainable Smart Society", International Conference on Materials and Systems for Sustainability (ICMaSS2017), Nagoya, Japan, Plenary Lecture, (2017/9/29)
  • [7] M.Ogura, Y.Ando, S.Usami, K.Nagamatsu, M.Kushimoto, M.Deki, A.Tanaka, S.Nitta, Y.Honda, M.Pristovsek, H.Kawai, S.Yagi, H.Amano", Development of Sustainable Smart Society by Transformative Electronics", 2017 IEEE International Electron Devices Meeting (IEDM 2017, San Francisco, U.S.A., Plenary Lecture, (2017/12/6)
  • [8] K.Nagamatsu, Y.Ando, Z.Ye, O.I Barry, A.Tanaka, M.Deki, S.Nitta, Y.Honda, and H.Amano, "Reduction of impurities and realization of high breakdown voltage Schottky barrier diodes using homoepitaxial m-plane GaN grown by metalorganic vapor phase epitaxy in a quartz-free reactor", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Poster C 02.17 (2017/7/26)
  • [9] S.Nitta, Z.Liu, S.Usami, Z.Ye, K.Nagamatsu, M.Kushimoto, M.Deki, A.Tanaka, Y.Honda, M.Pristovsek, and H.Amano, "In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices", Optics 2017 / 8th International Conference and Exhibition on Lasers, Optics & Photonics, Las Vegas, Nevada, USA, Invited (2017/11/16)
  • [10] M.Deki, K.Sone, J.Matsushita, K.Nagamatsu, A.Tanaka, M.Kushimoto, S.Nitta, Y.Honda, and H.Amano, "Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral C.4.6 (2017/07/25)
  • [11] M.Deki, Y.Ando, K.Nagamatsu, A.Tanaka, M.Kushimoto, S.Nitta, Y.Honda, and H.Amano, "Deep Levels in Homoepitaxial m-plane GaN Schottky Barrier Diodes", 10th International Workshop on Bulk Nitride Semiconductors, Espoo, Finland, Oral (2017/09/18)
  • [12] M.Deki, K.Nagamatsu, A.Tanaka, M.Kushimoto, S.Nitta, Y.Honda, and H.Amano, "Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors", International Conference on Materials and Systems for Sustainability 2017, Nagoya, Japan, Oral (2017/09/30)
  • [13] Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano, "m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Poster C.01.54 (2017/7/25)
  • [14] Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano, "Photocurrent and Photoluminescence measurements for InGaN Based LED", LEDIA’17 LDC'17 joint session., Yokohama, Japan, LED-LDC1-2, (2017/4/19)
  • [15] Yoshio Honda, Atsushi Tanaka, Shigeyoshi Usami, Kentaro Nagamatsu, Shugo Nitta, and Hiroshi Amano, "Dislocation observation of GaN/GaN homo epitaxial growth film by Multi-photon absorption photoluminescence", Semiconnano 2017, Como, Italy, Invited (2017/9/26)
  • [16] Hojun Lee, Siyoung Bae, Kaddour Lekhal, Yoshio Honda, Hiroshi Amano, "Optical characterization of semipolar InGaN/GaN MQWs grown on Si(001) substrate", 2017 MRS Spring Meeting & Exhibit (MRS2017), Phoenix, U.S.A., Oral (2017/4/17-21)
  • [17] X.Yang, S.Nitta, K.Nagamatsu, M.Pristovsek, Y.H.Liu, Y.Honda, and H.Amano, "The surface evolution of hexagonal boron nitride on sapphire by pulsed-mode MOVPE", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)
  • [18] Zhibin Liu, Ryosuke Miyagoshi, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Morphological study of InGaN layer growth on GaN substrate by metalorganic vapor phase epitaxy", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)
  • [19] Ousmane I Barry, Si-Young Bae, Kaddour Lekhal, Yoshio Honda, and Hiroshi Amano, "N2 carrier gas as an alternative to H2 for improved surface morphology and structural quality of MOVPE-grown m–plane (10-10) GaN", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/26)
  • [20] Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, "Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)
  • [21] Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano, "Reduction of Dislocation in GaN on Silicon Substrate Using In-situ Etching", 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, Oral (2017/7/25)
  • [22] Shigeyoshi Usami, Kazunobu Kojima, Maki Kushimoto, Manato Deki, Shugo Nitta, Shigefusa Chichibu, Hiroshi Amano, "Evaluation of internal quantum efficiency of LED by photocurrent measurement", The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), Banff, Canada, Oral (2017/10/11)
  • [23] Maki Kushimoto, Takafumi Suzuki, Daiki Ito, Yoshio Honda, and Hiroshi Amano, "Semipolar InGaN Optical Devices on Patterned Si Substrates", The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), Banff, Canada, Oral (2017/10/10)
  • [24] Ousmane I Barry, Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Markus Pristovsek, Yoshio Honda, and Hiroshi Amano, "Growthand characterization of homoepitaxial m-plane GaNon native bulk GaNsubstrates: prospects of next-generation electronic devices", 8th International Conference and Exhibition on Lasers, Optics & Photonics (Optics2017), Las Vegas, U.S.A., Oral (2017/11/14-17)
  • [25] Si-Young Bae, Kaddour Lekhal, Yoann Robin, Ho-Jun Lee, Ousmane 1 Barry, Xu Yang, Yaqiang Liao, Yoshio Honda, Hiroshi Amano, Jung-Wook Min, Dong-Seon Lee, "Defect reduction of GaN nano rods on hetero-substrates: Behaviors of basal stracking faults", 8th International Conference and Exhibition on Lasers, Optics & Photonics (Optics2017), Las Vegas, U.S.A., Oral (2017/11/14-17)
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